PART |
Description |
Maker |
IBM0118165J3-70 IBM0118165PT3-6R IBM0118165BT3-6R |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
International Business Machines, Corp.
|
GM71V18163CJ-6E |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Hynix Semiconductor, Inc.
|
UPD421175G5-35-7JF UPD421175G5-25-7JF UPD421175LE- |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
NN511666J-45 NN511663J-45 NN511666LJ-40 NN511663LJ |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Glenair, Inc.
|
V53C665Z80 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
EPCOS AG
|
UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR-II SRAM 2-Word Burst Architecture x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
MX26F128J3XCC-15 MX26F128J3XCC-12 MX26F128J3TC-12 |
Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY 旺宏NBit商标家庭128M的内存[x8/x16]V页模式eLiteFlash商标记忆
|
Electronic Theatre Controls, Inc.
|
MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400(x16)的快闪记忆体和4M(x16)的静态RAM
|
Spansion, Inc.
|
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|